Observations of the intermediate band in GaPN alloys by two-wavelength excited photoluminescence

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Tue. Mar 18, 2014 1:15 PM - 5:00 PM E11 (E205)

1:30 PM - 1:45 PM

^○Makiko Suetsugu¹, Touhidul Islam¹, Naoki Murakoshi¹, Tsukasa Hanaoka¹, Norihiko Kamata¹, Hiroyuki Yaguchi¹ (Saitama Univ.¹)

Keywords:フォトルミネッセンス,GaPN