The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

1:30 PM - 1:45 PM

[18p-E13-2] High quality GaN bulk crystal growth by acidic ammonothermal method

Makoto Saito1,2, Quanxi Bao1,3, Daisuke Tomida1, Kentaro Furusawa1, Yuji Kagamitani2, Rinzo Kayano3, Kun Qiao1, Tohru Ishiguro1, Chiaki Yokokyama1, Shigefusa Chichibu1 (IMRAM-Tohoku Univ.1, Mitsubishi Chemical Corp.2, The Japan Steel Works3)

Keywords:GaN,結晶成長,アモノサーマル