The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[18p-E13-1~18] 15.4 III-V-group nitride crystals

Tue. Mar 18, 2014 1:00 PM - 6:15 PM E13 (E301)

2:15 PM - 2:30 PM

[18p-E13-5] High rate GaN growth using Ga2O vapor on Na-flux-GaN substrates

Hiroaki Takatsu1, Masami Juta1, Tomoaki Sumi1, Yuan Bu1, Akira Kitamoto1, Mamoru Imade1, Masashi Yoshimura1, Masashi Isemura2, Yusuke Mori1 (Osaka Univ1, Itochu Plastics Inc2)

Keywords:GaN,Ga2O