Surface Morphologies of 4H-SiC Polar and Non-polar Substrates Treated by H<sub>2</sub>-gas Etching

Presentation information

Oral presentation

15. Crystal Engineering » 15.6 IV-group-based compounds

Tue. Mar 18, 2014 1:15 PM - 4:15 PM E5 (E105)

2:30 PM - 2:45 PM

^○Takahiro Higashi¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹, Jun Suda¹ (Kyoto Univ.¹)

Keywords:SiC,エッチング