[18p-E8-1~21] 6.3 Oxide-based electronics

△ [18p-E8-4] Metal-insulator transition due to charge disproportionation at a high temperature in a SrFeO_2.80 epitaxial thin film

^○Kei Hirai¹, Daisuke Kan¹, Noriya Ichikawa¹, Ko Mibu², Yoshitaka Yoda³, Yuichi Shimakawa^1,4 (ICR, Kyoto Univ.¹, Nagoya Institute of Technology², JASRI³, JST-CREST⁴)

Keywords:金属-絶縁体転移,メスバウアー,電荷不均化