The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.3 Oxide-based electronics

[18p-E8-1~21] 6.3 Oxide-based electronics

Tue. Mar 18, 2014 1:15 PM - 6:45 PM E8 (E202)

2:00 PM - 2:15 PM

[18p-E8-4] Metal-insulator transition due to charge disproportionation at a high temperature in a SrFeO2.80 epitaxial thin film

Kei Hirai1, Daisuke Kan1, Noriya Ichikawa1, Ko Mibu2, Yoshitaka Yoda3, Yuichi Shimakawa1,4 (ICR, Kyoto Univ.1, Nagoya Institute of Technology2, JASRI3, JST-CREST4)

Keywords:金属-絶縁体転移,メスバウアー,電荷不均化