Ultra-low-temperature epitaxial growth of SiGeSn thin-films by using preferential melting of Ge atoms into liquid-Sn

Presentation information

Oral presentation

15. Crystal Engineering » 15.5 IV-group crystals and IV-IV-group mixed crystals

Tue. Mar 18, 2014 1:30 PM - 6:45 PM F6 (F306)

5:15 PM - 5:30 PM

^○Motohiro Kato¹, Masashi Kurosawa^1,2, Takashi Yamaha¹, Noriyuki Taoka¹, Osamu Nakatsuka¹, Shigeaki Zaima¹ (Nagoya Univ.¹, JSPS²)

Keywords:SiGeSn,epitaxial growth,エピタキシャル成長