The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[18p-PA11-1~8] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Tue. Mar 18, 2014 4:00 PM - 6:00 PM PA11 (アリーナ)

4:00 PM - 6:00 PM

[18p-PA11-8] Simulation of Gate-Oxide thickness dependence for Body Short Type Self-bias Channel Diode Characteristics

○Daisuke Yamada1, Tsugutomo Kudoh1, Fumihiko Sugawara2 (Kanagawa Inst. of Tech.1, Tohoku-Gakuin Univ.2)

Keywords:自己バイアス,ボディ短絡,トレード・オフ