[18p-PA12-1~10] 13.4 Devices/Integration Technologies

[18p-PA12-4] Advantage of (100)/<100> Oriented Channels in Biaxially- and Uniaxially Strained-Ge-On-Insulator pMOSFETs with NiGe Metal Source/Drain

^○Keiji Ikeda¹, Yoshihiko Moriyama¹, Yuuichi Kamimuta¹, Mizuki Ono¹, Toshifumi Irisawa¹, Minoru Oda¹, Etsuo Kurosawa¹, Tsutomu Tezuka¹ (GNC-AIST¹)

Keywords:MOSFET,Ge