The 61st JSAP Spring Meeting, 2014

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Poster presentation

13. Semiconductors A (Silicon) » 13.4 Devices/Integration Technologies

[18p-PA12-1~10] 13.4 Devices/Integration Technologies

Tue. Mar 18, 2014 4:00 PM - 6:00 PM PA12 (アリーナ)

4:00 PM - 6:00 PM

[18p-PA12-7] Low-dielectric constant SiCN charge trapping layer for nonvolatile memory applications(Ⅲ)

○（B）Yoshina Ito1, Shinji Naito2, Kiyoteru Kobayashi1,2 (Tokai Univ.1, Tokai Univ.2)

Keywords:SiCN,不揮発性メモリ