The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

08. Plasma Electronics » 8.4 Plasma etching

[18p-PA7-1~2] 8.4 Plasma etching

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PA7 (アリーナ)

1:30 PM - 3:30 PM

[18p-PA7-2] Analysis on etching rate of silicon surface by hydrogen plasma based on first-principles calculations

Kouji Inagaki1,2, Yoshitada Morikawa1, Kiyoshi Yasutake1,2 (Osaka Univ.1, CREST-JST2)

Keywords:Si表面,Hプラズマ,エッチングレート