The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

08. Plasma Electronics » 8.6 General plasma phenomena, emerging area of plasmas and their new applications

[18p-PA8-1~14] 8.6 General plasma phenomena, emerging area of plasmas and their new applications

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PA8 (アリーナ)

1:30 PM - 3:30 PM

[18p-PA8-1] Formation of Polycrystalline Si Film Using Selective Heating Phenomenon of Transition Metal by Hydrogen Radical Irradiation and Its Application to Device Fabrication

Hiroki Nakaie1, Kazuki Kamimura1, Tetsuji Arai1, Keisuke Arimoto1, Junji Yamanaka1, Tetsuya Sato1, Kiyokazu Nakagawa1, Toshiyuki Takamatsu2, Kentarou Sawano3 (Univ. of Yamanashi1, SST Inc.2, Tokyo City Univ.3)

Keywords:水素ラジカル,多結晶Si,選択加熱