The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-PG3-1~19] 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

[18p-PG3-10] Frequency dispersion of gm in InAlN/GaN HEMTs and AlGaN/GaN HEMTs

○Shinya Hatakeyama1, Tetsuya Suemitsu1, Taiichi Otsuji1, Kengo Kobayashi1, Tomohiro Yoshida1 (RIEC, Tohoku Univ1)

Keywords:窒化物半導体デバイス