The 61st JSAP Spring Meeting, 2014

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14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-PG3-1~19] 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

[18p-PG3-19] Electrical characteristics of a-plane low-Mg-doped p-GaN Schottky contacts (2)

○Moe Naganawa1, Toshichika Aoki1, Kenji Shiojima1, Hiroshi Amano2, Son Ji-Su2 (Univ. of Fukui1, Nagoya Univ.2)

Keywords:a面GaN,低Mgドープ,ショットキー接触