InGaAs channel tri-gate MOSFETs with MOVPE regrown source/drain

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

^○Yuichi Mishima¹, Toru Kanazawa¹, Haruki Kinoshita¹, Eiji Uehara¹, Yasuyuki Miyamoto¹ (Tokyo Tech¹)

Keywords:MOSFET,InGaAs,マルチゲートデバイス