The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-PG3-1~19] 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

[18p-PG3-5] Temperature Dependence of Current-Voltage Characteristics of GaN/AlN Resonant Tunneling Diode

Masanori Nagase1, Tokio Takahashi2, Mitsuaki Shimizu2 (AIST-NRI1, AIST-APERC2)

Keywords:共鳴トンネルダイオード,窒化物半導体,有機金属気相成長法