The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[18p-PG3-1~19] 14.3 Electron devices and Process technology

Tue. Mar 18, 2014 1:30 PM - 3:30 PM PG3 (G棟2階)

1:30 PM - 3:30 PM

[18p-PG3-8] Breakdown Voltage Characteristics of GaN/AlGaN/GaN Polarization Super Junction (PSJ) Transistor

Sota Matsumoto1, Shoko Hirata1, Yoshiharu Kouji1, Hiroshi Sugiura1, Shuichi Yagi1, Hiroji Kawai1 (POWDEK. K.K1)

Keywords:GaN,トランジスタ