[18p-PG3-1~19] 14.3 Electron devices and Process technology

[18p-PG3-9] Process dependent electrical characteristics of La2O3 gate dielectrics on AlGaN/GaN devices

^○Jiangning Chen¹, Kuniyuki Kakushima², Yoshinori Kataoka², Akira Nishiyama², Nobuyuki Sugii², Hitoshi Wakabayashi², Kazuo Tsutsui², Kenji Natori¹, Hiroshi Iwai¹, Wataru Saito³ (Tokyo Tech. FRC¹, Tokyo Tech. IGSSE², Toshiba³)

Keywords:絶縁膜, AlGaN/GaN, プロセス