[18p-PG6-1~15] 15.3 III-V-group epitaxial crystals

[18p-PG6-8] Capacitance-voltage characteristics of C60 doped GaAs diodes grown by MBE

^○Jiro Nishinaga¹, Yoshiji Horikoshi² (Waseda Univ.¹, Waseda Univ.²)

Keywords:フラーレン,GaAs,接合容量