Comparison between Resistive Hysteresis and Memory Characteristics of CSD BTO and PZT Ferroelectric Thin Films

Presentation information

Oral presentation

06. Thin Films and Surfaces » 6.1 Ferroelectric thin films

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D10 (D316)

11:45 AM - 12:00 PM

^○Shuhei Hashimoto¹, Shinpei Fuchida¹, Ziyang Zhang¹, Kaoru Yamashita¹, Minoru Noda¹ (Kyoto Inst. Tech¹)

Keywords:抵抗メモリ,BaTiO3,強誘電体薄膜