[19a-D8-1~13] 14.3 Electron devices and Process technology

[19a-D8-12] InAlN barrier thickness dependence of device performance for InAlN/AlN/GaN HEMTs (II)

^○Yoshimi Yamashita¹, Issei Watanabe¹, Akira Endoh^1,2, Akifumi Kasamatsu¹, Takashi Mimura^1,2 (NICT¹, Fujitsu Lab.²)

Keywords:InAlN,HEMT,MIS