Investigation on the vertical buffer leakage current using AlGaN/GaN HEMTs on GaN substrates

Shinichi Tanabe

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19a-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D8 (D215)

9:15 AM - 9:30 AM

[19a-D8-2] Investigation on the vertical buffer leakage current using AlGaN/GaN HEMTs on GaN substrates

^○Shinichi Tanabe¹, Noriyuki Watanabe¹, Masahiro Uchida², Takashi Fukada³, Kazumasa Kiyomi³, Hideaki Matsuzaki¹ (NTT Photonics Labs.¹, NTT-AT², Mitsubishi Chemical³)

Keywords:GaN

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