[19a-D8-1~13] 14.3 Electron devices and Process technology

△ [19a-D8-8] Selective-electrochemical etching of p-GaN layers grown on AlGaN/GaN heterostructures

^○Yusuke Kumazaki¹, Taketomo Sato¹, Tamotsu Hashizume^1,2 (RCIQE, Hokkaido Univ.¹, JST-CREST²)

Keywords:高電子移動度トランジスタ,電気化学エッチング,ノーマリオフ