Comparison of Wetting Properties between GeO<sub>2</sub>/Ge and SiO<sub>2</sub>/Si at Controlled Relative Humidity by in situ XPS

Kenta Arima

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13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 9:00 AM - 12:30 PM D9 (D315)

10:00 AM - 10:15 AM

[19a-D9-5] Comparison of Wetting Properties between GeO₂/Ge and SiO₂/Si at Controlled Relative Humidity by in situ XPS

^○Kenta Arima¹, Yoshie Kawai¹, Yuya Minoura¹, Yusuke Saito¹, Daichi Mori¹, Kentaro Kawai¹, Takuji Hosoi¹, Heiji Watanabe¹, Mizuho Morita¹, Zhi Liu² (Osaka Univ.¹, Lawrence Berkeley National Lab.²)

Keywords:X線光電子分光,濡れ性,極薄酸化物

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Presentation information

[19a-D9-1~13] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19a-D9-5] Comparison of Wetting Properties between GeO2/Ge and SiO2/Si at Controlled Relative Humidity by in situ XPS

[19a-D9-5] Comparison of Wetting Properties between GeO₂/Ge and SiO₂/Si at Controlled Relative Humidity by in situ XPS