Improvement of reverse-biased characteristics in a Pt/ZnO Schottky photodiode

Presentation information

Oral presentation

Joint Session K "Wide bandgap oxide semiconductor materials and devices" » Nanocarbon Technology

Wed. Mar 19, 2014 9:30 AM - 12:00 PM E10 (E204)

11:00 AM - 11:15 AM

^○Haruyuki Endo¹, Ritsuo Ohashi², Takashi Abe¹, Kyo Takahashi¹, Yasube Kashiwaba³ (Iwate Ind. Res. Inst.¹, EMC Semiconductor Corp.², Iwate Univ.³)

Keywords:ZnO,Schottky photodiode,ultraviolet sensor