Photoluminescence properties of Ge films formed on SiO<sub>2</sub>

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E11 (E205)

9:15 AM - 9:30 AM

^○（M2）Seiya Kamigata¹, Xuejun Xu¹, Kentaro Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo City Univ.¹)

Keywords:Ge on SiO₂,Photoluminescence,低温Ge