Phosphorus delta-doping at Ge quantum dots /Si interfaces and their photoluminescence

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.4 Optical properties and light-emitting devices

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E11 (E205)

9:30 AM - 9:45 AM

^○Tatsuya Nakama¹, Xuejun Xu¹, Kentarou Sawano¹, Yasuhiro Shiraki¹, Takuya Maruizumi¹ (Tokyo City Univ.¹)

Keywords:Ge量子ドット,フォトルミネッセンス