The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

15. Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-E13-1~11] 15.4 III-V-group nitride crystals

Wed. Mar 19, 2014 9:00 AM - 12:00 PM E13 (E301)

9:45 AM - 10:00 AM

[19a-E13-4] Remarkably Short Radiative Recombination Lifetime of High Quality Semipolar AlGaN/AlN Quantum Wells due to Suppression of Internal Electric Field

Shuhei Ichikawa1, Mitsuru Funato1, Yoichi Kawakami1 (Kyoto Univ.1)

Keywords:半極性,AlGaN,内部電界