The 61st JSAP Spring Meeting, 2014

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13. Semiconductors A (Silicon) » 13.3 Si Process・Interconnect・MEMS・Integration

[19a-E14-1~10] 13.3 Si Process・Interconnect・MEMS・Integration

Wed. Mar 19, 2014 9:00 AM - 11:45 AM E14 (E302)

10:30 AM - 10:45 AM

[19a-E14-6] Curvature Analysis of Glass Substrate during Millisecond Annealing Induced by Thermal-Plasma-Jet Using Surface Densification Model

○Keisuke Tanaka1, Shohei Hayashi1, Seiichiro Higashi1 (Grad. School of AdSM, Hiroshima Univ.1)

Keywords:緻密化,ガラス基板,急速熱処理