[19a-E8-1~9] 6.3 Oxide-based electronics

[19a-E8-3] Low power-driven metal-insulator transition using the Joule heat in VO2 free-standing structures and its mechanism elucidation by heat flow simulation

^○Shota Yamasaki¹, Teruo Kanki¹, Luca Pellegrino², Nicola Manca^2,3, Daniel Marre^2,3, Hidekazu Tanaka¹ (Osaka Univ.¹, CNR-SPIN², Genova Univ.³)

Keywords:フリースタンディング,VO2,酸化物薄膜