[19a-F12-1~13] 13.4 Devices/Integration Technologies

[19a-F12-10] On the drain bias dependencies of tunnel FETs

^○Koichi Fukuda¹, Takahiro Mori¹, Wataru Mizubayashi¹, Akito Tanabe¹, Meishoku Masahara¹, Tetsuji Yasuda¹, Shinji Migita¹, Hiroyuki Ota¹, Yukinori Morita¹ (AIST GNC¹)

Keywords:Tunnel FET,Device Simulation