[19a-F12-1~13] 13.4 Devices/Integration Technologies

[19a-F12-3] Analysis of FinFET variability caused by granular work function variation of metal gates

^○Takashi Matsukawa¹, Kouichi Fukuda¹, Yongxun Liu¹, Kazuhiko Endo¹, Junichi Tsukada¹, Hiromi Yamauchi¹, Yuki Ishikawa¹, Shinichi O'uchi¹, Wataru Mizubayashi¹, Hiroyuki Ota¹, Shinji Migita¹, Yukinori Morita¹, Meishoku Masahara¹ (AIST, NeRI¹)

Keywords:FinFET,ばらつき