[19a-F12-1~13] 13.4 Devices/Integration Technologies

[19a-F12-5] Statistical Characteristics Analysis of “N-curve” and Static Noise Margin for Prediction of Yield of SRAM Cell Array

^○Tomoko Mizutani¹, Yoshiki Yamamoto², Hideki Makiyama², Hirofumi Shinohara², Toshiaki Iwamatsu², Hidekazu Oda², Shiro Kamohara², Nobuyuki Sugii², Toshiro Hiramoto¹ (IIS, Univ. of Tokyo¹, LEAP²)

Keywords:SRAM,N-curve,ばらつき