[19a-F6-1~6] 8.4 Plasma etching

[19a-F6-2] Molecular Dynamics Analysis of Surface Reaction Kinetics during Si Etching in Cl-based Plasmas: Oblique Incidence of Etch Byproducts Ions

^○（D）Nobuya Nakazaki¹, Yoshinori Takao¹, Koji Eriguchi¹, Kouichi Ono¹ (Kyoto Univ.¹)

Keywords:Si etching,Cl-based plasma,Molecular dynamics