The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

08. Plasma Electronics » 8.3 Plasma deposition of thin film and surface treatment

[19a-PA4-1~12] 8.3 Plasma deposition of thin film and surface treatment

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PA4 (アリーナ)

9:30 AM - 11:30 AM

[19a-PA4-3] Characterization of a-Si:H:F Thin Films Fabricated by Low-energy Electron Beam Irradiation on Solid Thin Films of Silicon Tetrafluoride Formed at Cryogenic Temperature.

Nao Sakamaki1, Ryutaro Yamada1, Tetsuya Sato1, Kiyokazu Nakagawa1 (Univ. of Yamanashi1)

Keywords:a-Si,四フッ化ケイ素,極低温