The 61st JSAP Spring Meeting, 2014

Presentation information

Poster presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19a-PG3-1~13] 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 9:30 AM - 11:30 AM PG3 (G棟2階)

9:30 AM - 11:30 AM

[19a-PG3-5] Fabrication and characterization of Mg2Si pn-junction photodiode with circular electrode

Masaaki Takezaki1, Kenta Daitoku1, Syuntaro Tanikawa2, Daiju Tsuya2, Haruhiko Udono1 (Ibaraki Univ1, NIMS2)

Keywords:マグネシウムシリサイド,半導体