[19a-PG5-1~8] 15.8 Crystal evaluation, impurities and crystal defects

[19a-PG5-2] Strain mapping of Al ion-implanted silicon carbide crystals by X-ray penetration-depth-controlled grazing incidence topography

^○Yumiko Takahashi¹, Keiichi Hirano¹, Jun-ichi Yoshimura¹, Shinji Nagamachi², Masanori Komuro¹ (KEK-PF¹, Nagamachi Science Laboratory²)

Keywords:トポグラフィー,放射光,SiC