[19a-PG5-1~8] 15.8 Crystal evaluation, impurities and crystal defects

△ [19a-PG5-7] Effects of dislocations on electrical characteristics of SiC-SBDs

^○Makoto Tominaga¹, Yuya Ishibashi¹, Shuichi Ono², Manabu Arai², Hidekazu Yamamoto¹ (Chiba Inst. of Tech.¹, New Japan Radio Corp.²)

Keywords:SiC,ショットキー障壁ダイオード,転位