Interstitial Channels that Control Band Gaps and Effective Masses in Covalent Semiconductors

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 2:00 PM - 5:45 PM D3 (D114)

2:00 PM - 2:15 PM

^○Yu-ichiro Matsushita^1,2, Atsushi Oshiyama¹ (The Univ. of Tokyo¹, Max-Planck Inst.²)

Keywords:SiC,バンドギャップ,多形