The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.1 Physical properties of exploratory materials

[19p-D3-1~14] 14.1 Physical properties of exploratory materials

Wed. Mar 19, 2014 2:00 PM - 5:45 PM D3 (D114)

5:00 PM - 5:15 PM

[19p-D3-12] High Density Formation of Fe-Silicide Nanodots on SiO2 Induced by Remote H2 Plasma

Hai Zhang1, Katsunori Makihara1, Akio Ohta2, Mitsuhisa Ikeda3, Seiichi Miyazaki1 (Nagoya Univ1, Nagoya Univ. VBL2, Hiroshima Univ.3)

Keywords:シリサイドナノドット,鉄シリサイドナノドット,水素プラズマ