The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

4:45 PM - 5:00 PM

[19p-D8-11] Characterization of MOS Interface Properties in Al2O3/AlGaN/GaN Structures with Dry-etched AlGaN Surface

Zenji Yatabe1, Yujin Hori1, Tamotsu Hashizume1,2 (RCIQE, Hokkaido Univ.1, JST-CREST2)

Keywords:窒化物半導体,MOS,界面準位