Properties of ohmic contact to 2DEG of AlGaN/GaN strucutres depending on AlGaN layer thickness for different contact metals

Yusuke Takei

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

[19p-D8-1~13] 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

4:00 PM - 4:15 PM

△ [19p-D8-8] Properties of ohmic contact to 2DEG of AlGaN/GaN strucutres depending on AlGaN layer thickness for different contact metals

^○Yusuke Takei¹, Mari Okamoto¹, Shin Man¹, Rei Kayanuma¹, Masayuki Kamiya¹, Wataru Saito³, Kazuo Tsutsui¹, Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Yoshinori Kataoka², Hiroshi Iwai² (Tokyo Inst. Technology¹, Tokyo Inst. Technology², Toshiba³)

Keywords:AlGaN,エッチング,オーミックコンタクト