Effect of annealing on properties of InAlN MOS diodes with ALD-Al<sub>2</sub>O<sub>3</sub>insulator layer

Presentation information

Oral presentation

14. Semiconductors B (Exploratory Materials, Physical Properties, Devices) » 14.3 Electron devices and Process technology

Wed. Mar 19, 2014 2:00 PM - 5:30 PM D8 (D215)

4:15 PM - 4:30 PM

^○Masahito Chiba¹, Takuma Nakano¹, Masamichi Akazawa¹ (Hokkaido Univ.¹)

Keywords:InAlN,MOS,Al2O3