The 61st JSAP Spring Meeting, 2014

Presentation information

Oral presentation

13. Semiconductors A (Silicon) » 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

Wed. Mar 19, 2014 2:00 PM - 7:00 PM D9 (D315)

6:15 PM - 6:30 PM

[19p-D9-16] First Principles Study of the Relation between Schottky-barrier Change and Interface Structure at Sn/Ge Interfaces

Kyosuke Kobinata1, Takashi Nakayama1 (Chiba Univ.1)

Keywords:Ge,Sn/Ge界面,ショットキーバリア