[19p-D9-1~18] 13.1 Basic Properties, Surface and Interface Phenomena, and Simulation

△ [19p-D9-4] Evaluation of strain in Si using tip-enhanced Raman spectroscopy

^○Daisuke Kosemura¹, Motohiro Tomita¹, Che Mohd Yusoff Siti Norhidayah¹, Chie Goto², Tetsunari Kawaguchi², Mayumi Misawa², Atsushi Ogura¹ (Meiji Univ.¹, Bruker AXS²)

Keywords:チップ増強ラマン,歪Si