The 61st JSAP Spring Meeting, 2014

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Symposium planned by Program Committee » Creation of New Functional Materials by Wide-bandgap Oxide Semiconductors

[19p-E10-1~11] Creation of New Functional Materials by Wide-bandgap Oxide Semiconductors

Wed. Mar 19, 2014 1:15 PM - 5:45 PM E10 (E204)

5:30 PM - 5:45 PM

[19p-E10-11] Electrical Properties of beta-Ga2O3 / SiC Heterojunction Diodes

○Shinji Nakagomi1, Yoshihiro Kokubun1 (Ishinomaki Senshu Univ.1)

Keywords:酸化ガリウム,ヘテロ接合,高温