The 61st JSAP Spring Meeting, 2014

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Symposium planned by Program Committee » Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

Wed. Mar 19, 2014 1:00 PM - 7:00 PM E13 (E301)

5:30 PM - 5:45 PM

[19p-E13-13] Theoretical investigation of the surface orientation dependence of In-incorporation during InGaN growth

○Yu Fujimura1, Hisashi Murakami1, Yoshinao Kumagai1, Akinori Koukitu1 (Tokyo Univ. of Agri. and Tech.1)

Keywords:ab initio, 窒化物, InGaN, HVPE