[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

[19p-E13-4] Characterization of InN Layers Grown by Two-Step Precursor Generation Hydride Vapor Phase Epitaxy

^○Rie Togashi¹, Hironobu Saito¹, Naoto Fujita¹, Ryota Imai¹, Hisashi Murakami¹, Yoshinao Kumagai¹, Akinori Koukitu¹ (Tokyo Univ. of Agri. & Tech.¹)

Keywords:InN,Hydride Vapor Phase Epitaxy