[19p-E13-1~17] Materials science of singularity in nitride semiconductors -growth, fabrication, creation of new functions-

[19p-E13-5] Incorporation Mechanism of c-InN in h-InN Grown by Pressurized-Reactor MOVPE

^○Y Kangawa^{1, 2}, T Hamada², T Kimura³, R Katayama³, T Matsuoka³, K Kakimoto^{1, 2} (RIAM, Kyushu Univ.¹, Kyushu Univ.², IMR, Tohoku Univ.³)

Keywords:InN