[19p-E14-1~21] 13.3 Si Process・Interconnect・MEMS・Integration

[19p-E14-12] Electric properties of thermal oxide formed by minimal resistance furnace

^○Katsuhiko Nakato¹, hitoshi Asano¹, Sinnosuke Suzuki^1,3, Shogo Matsuda^1,3, Ayami Yaginuma^1,3, Kiyohiko Morikawa^1,3, Masashi Hattori^1,3, Takanori Mikahara¹, Shinichi Ikeda^1,2, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (MINIMAL¹, AIST², KOYO Thermo System Co.,Ltd³)

Keywords:ミニマル